rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131 217 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, in c. 1 of 3 D10040230PH1 gaas /gan power doubler hybrid 45 mhz to 1 000 mhz the D10040230PH1 is a hybrid power doubler amplifier module. the part employs gaas phemt die and gan phemt die, has high output capability, and is operated from 45mhz to 1000mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. package: sot - 115j features excellent linearity superior r eturn loss performance extremely low distortion optimal reliability low noise unconditionally stable under all terminations extremely high output capa bility 22.5 db min. gain at 1ghz 450 ma max. at 24vdc applications 4 5 mhz to 1000mhz cat v amplifier systems ordering information d100402 30ph1 box with 50 pieces absolute maximum rat ings parameter rating unit rf input voltage (single tone) 60 dbmv dc supply over - voltage (5 minutes) 30 v storage temperature - 40 to +100 c operating mounting base temperature - 30 to +100 c caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum r ating conditions is not implie D10040230PH1
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131 217 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 D10040230PH1 nominal operating parameters parameter specification unit condition min typ max general performance v + = 24v; t mb = 30c; z s = z l = 75 power gain 21.0 21.5 22.0 db f = 45 mhz 22.5 23.0 24.0 db f = 1000mhz slope [ 1 ] 1.0 1.5 2.5 db f = 4 5 mhz to 1000mhz flatness of frequency response 0.8 db f = 4 5 mhz to 1000mhz (peak to valley) input return loss 20 db f = 4 5 mhz to 320mhz 19 db f = 320mhz to 640mhz 18 db f = 640mhz to 870mhz 16 db f = 870mhz to 1000mhz output return loss 20 db f = 4 5 mhz to 320mhz 19 db f = 320mhz to 640mhz 18 db f = 640mhz to 870mhz 17 db f = 870mhz to 1000mhz noise figure 3.0 4.0 db f = 50mhz to 1000mhz total current consumption (dc) 43 0 .0 450.0 ma distortion data 40mhz to 550mhz v + = 24v; t mb = 30c; z s = z l = 75 ctb - 77 - 74 dbc 79 ch 7 db tilted ; v 0 = 50 dbmv at 550mhz, plus 75 digital channels ( - 6db offset) [ 2 ] xmod - 71 - 68 dbc cso - 71 - 68 dbc cin 63 66 db 1 . the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, ntsc frequency raster: 55.25mhz to 547.25mhz, +43dbmv to +50dbmv tilted output level, plus 75 digital channels, - 6db offset relative to the equivalent analog carrier. composite second order (cso) - the cso parameter (both sum and di fference products) is defined by the ncta. composite triple beat (ctb) - the ctb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (selective voltmeter method), referenced to 100% modulation of th e carrier being tested. carrier to intermodulation noise (cin) - the cin parameter is defined by an si/scte 17 (test procedure for c arrier to n oise) .
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131 217 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3 D10040230PH1 package drawing (dimensions in millimeters) 13, 4 1 2 3 5 7 8 9 r o q m 5 10mm 0 scale b n l f a d h ? g t s p j u i e c k european projection n o m i n a l m i n m a x a 4 4 , 6 0 , 2 4 4 , 4 4 4 , 8 b 1 3 , 6 0 , 2 4 4 , 4 1 3 , 8 c 2 0 , 4 0 , 5 1 9 , 9 2 0 , 9 d 8 0 , 1 5 7 , 8 5 8 , 1 5 e 1 2 , 6 0 , 1 5 1 2 , 4 5 1 2 , 7 5 f 3 8 , 1 0 , 2 3 7 , 9 3 8 , 3 g 4 + 0 , 2 / - 0 , 0 5 3 , 9 5 4 , 2 h 4 0 , 2 3 , 8 4 , 2 i 2 5 , 4 0 , 2 2 5 , 2 2 5 , 6 j u n c 6 - 3 2 - - k 4 , 2 0 , 2 4 , 0 4 , 4 l 2 7 , 2 0 , 2 2 7 , 0 2 7 , 4 m 1 1 , 6 0 , 5 1 1 , 1 1 2 , 1 n 5 , 8 0 , 4 5 , 4 6 , 2 o 0 , 2 5 0 , 0 2 0 , 2 3 0 , 2 7 p 0 , 4 5 0 , 0 3 0 , 4 2 0 , 4 8 q 2 , 5 4 0 , 3 2 , 2 4 2 , 8 4 r 2 , 5 4 0 , 5 2 , 0 4 3 , 0 4 s 2 , 5 4 0 , 2 5 2 , 2 9 2 , 7 9 t 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 u 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 p i n n a m e 1 i n p u t 2 - 3 g n d 4 5 + v b 6 7 - 8 g n d 9 o u t p u t pinning: notes:
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